POWER PERFORMANCE OF PNP InAlAs/InGaAs HBTs
نویسندگان
چکیده
Recently, small-signal microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1, 2]. While power performance of PNP AlGaAs/GaAs HBTs has been demonstrated [3], nothing has been reported on power performance of PNP HBTs in the InP material system. In this work, InAlAs/InGaAs PNP HBTs were fabricated and subsequently characterized under large signal conditions at X-band to determine their suitability for high-frequency power applications. PNP HBTs demonstrated fT and fmax as high as 13 and 35 GHz, respectively. Power performance at 10 GHz was comparable to InP-based NPN single HBTs, providing up to 10 dB of gain, 0.49 mW/μm of output power, and 24% power-added efficiency. Analysis of these HBTs suggests further design and epilayer optimizations for increased power performance.
منابع مشابه
Performance Optimization of PNP InAlAs/InGaAs HBTs
Recently, microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1]. Although some simulations have been performed for the optimization of GaAs-based PNP HBTs [2], little has been reported on the optimization of PNP HBTs in the InP material system. In this work, various layer structures for InAlAs/InGaAs PNP HBTs were simulated using a 2dimensional drift-diffusion simulator in orde...
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